silicon power npn transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8761 issue 1 page 1 of 3 2N5663 ? fast switching transistor ? hermetic to-5 metal package ? applications include high speed switching circuits and power amplifiers ? screening options available absolute maximum ratings (t a = 25c unless otherwise stated) v cbo collector ? base voltage 400v v cer collector ? emitter voltage 400v v ceo collector ? emitter voltage 300v v ebo emitter ? base voltage 6v i b base current 0.5a i c continuous collector current 2a p d total power dissipation at t c = 25c 17.5w derate above 25c 100mw/c p d total power dissipation at t a = 25c 1.0w derate above 25c 5.7mw/c t j operating junction temperature range -65 to +200c t stg storage temperature range -65 to +200c thermal properties symbols parameters max units r jc thermal resistance, junction to case 10.0 c/w r ja thermal resistance, junction to ambient 175.0 c/w
silicon power npn transistor 2N5663 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8761 issue 1 page 2 of 3 ** this datasheet supersedes document 5384 electrical characteristics (t a = 25c unless otherwise stated) symbols parameters test conditions min typ max unit s v cb = 300v 0.1 a i cbo collector-base cut-off current v cb = 400v 1.0 ma i b = 0 v ce = 300v 0.2 i ces collector-emitter cut- off current t a = 150 c 9 a v (br)ceo (1) collector-emitter breakdown voltage i c = 10ma 300 v (br)cer (1) collector-emitter breakdown voltage i c = 10ma r be =100 400 v (br)ebo emitter-base breakdown voltage i e = 10 a 6 i c = 1.0a i b =0.1a 0.4 v ce(sat) (1) collector-emitter saturation voltage i c = 2a i b =0.4a 0.8 i c = 1.0a i b = 0.1a 1.2 v be(sat) (1) base-emitter saturation voltage i c = 2a i b = 0.4a 1.5 v i c = 50ma v ce = 2v 25 i c = 0.5a v ce = 5v 25 75 t a = -55 c 10 i c = 1.0a v ce = 5v 15 h fe (1) dc current gain i c = 2a v ce = 5v 5 dynamic characteristics i c = 0.1a v ce = 5v | h fe | small signal forward-current transfer ratio f = 10mhz 1.4 7 v cb = 10v i e = 0 c obo output capacitance f = 1.0mhz 45 pf t on turn-on time i c = 0.5a v cc = 100v 0.48 t off turn-off time i b1 = -i b2 = 25ma 1.5 s notes notes notes notes (1) pulse width 300us, 2%
silicon power npn transistor 2N5663 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8761 issue 1 page 3 of 3 mechanical data dimensions in mm (inches) 0.89 (0.035) max. 38.00 (1.5) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 45 6.10 (0.240) 6.60 (0.260) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 1 2 3 0.74 (0.029) 1.14 (0.045) to-5 (to-205aa) pin 1 - emitter pin 2 - base pin 3 - collector
|
